Characterization of SiO2/SiC Interface of Phosphorous-Doped MOS Capacitors by Conductance Measurements
M. I. Idris1, Z. A. F. M. Napiah2, M. N. Shah Zainudin3, S. A. M. Chachuli4, Marzaini Rashid5
1M. I. Idris, Micro and Nano Electronic (MiNE), Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Malaysia (UTeM), Malaysia.
2Z. A. F. M. Napiah, Micro and Nano Electronic (MiNE), Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Malaysia (UTeM), Malaysia.
3M. N. Shah Zainudin, Machine Learning and Signal Processing (MLSP), Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Malaysia (UTeM), Malaysia.
41S. A. M. Chachuli, Advanced Sensors & Embedded Control Research (ASECS), Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Malaysia (UTeM), Malaysia.
5Marzaini Rashid, School of Physics, Universiti Sains Malaysia (USM), Malaysia.
Manuscript received on 17 August 2019. | Revised Manuscript received on 23 August 2019. | Manuscript published on 30 September 2019. | PP: 5505-5508 | Volume-8 Issue-3 September 2019 | Retrieval Number: C5316098319/2019©BEIESP | DOI: 10.35940/ijrte.C5316.098319
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface states and interface state density determined by C-ψs method was studied. It was found that fast states in phosphorous incorporated samples reduced significantly at high frequency (>5 MHz) while sample annealed with nitrogen remained high up to 10 MHz. The interface state density, Dit of phosphorous incorporated sample near conduction band is lower compared to nitridated sample. These results indicate phosphorous passivation effectively reduces Dit at the SiO2/SiC interfaces and can be correlated to high channel mobility.
Index Terms: MOS Capacitor, Phosphorus, Interface State Density, Fast Trap, 4H-SiC MOSFET.
Scope of the Article: Network Traffic Characterization and Measurements