High Speed EX_NOR Gate At 22nm High K Metal Gate Strained Si Technology Node
Shobha Sharmal1, Amita Dev2

1Shobha Sharma, Department of Electrical Communication Engineering, Indira Gandhi Delhi Technical University for Women, Delhi, India.
2Amita Dev, Principal, Bhai Parmanand Institute of Business Studies, Delhi, India.

Manuscript received on 23 May 2015 | Revised Manuscript received on 30 May 2015 | Manuscript published on 30 May 2015 | PP: 60-61 | Volume-4 Issue-2, May 2015 | Retrieval Number: B1432054215©BEIESP
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: The propagation delay of the normal Ex_Nor circuit is calculated to be —with reverse body bias. Also the propagation delay of the same exnor circuit is calculated with its body bias forward biased of Vdd/2. With forward body bias the propagation delay is reduced by 55.89% and this high speed Exnor circuit finds its application where power penalty is acceptable
Keyword: 22nm, high speed, X-nor gate, X-or gate

Scope of the Article: Nanotechnology