Physics Based Modeling of Intrinsic Material Parameters of III-V Nitride Semiconductors: Elevated Temperature Effects
Suman Kumar Laha1, Moumita Mukherjee2

1Mr.Suman Kumar Laha, Department of Electronics and Communication, SDET Brainware Group of Institutions, West Bengal University of Technology, Kolkata (W.B.), India.
2Dr. Moumita Mukherjee, Scientist-‘B’ (Sr. Asst Prof), CMSDS, DRDO Centre, Kolkata (W.B.), India.

Manuscript received on 20 January 2014 | Revised Manuscript received on 25 January 2014 | Manuscript published on 30 January 2014 | PP: 48-50 | Volume-2 Issue-6, January 2014 | Retrieval Number: F0917012614/2014©BEIESP
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Abstract: A physics based model of temperature and field dependent electrical parameters of compound semiconductor materials such as Gallium Nitride (GaN), Aluminum Nitride (AlN) and Indium Nitride (InN) are developed exclusively. A huge number of (MC) Monte Carlo equations and experimental data results are described in this work for this model development. This paper represents the comparison of different material parameters like electron mobility, velocity, intrinsic carrier concentration and energy gap in different III-V materials like GaN, AlN and InN of Wurtzite structure using an iterative method at 300K and elevated temperature. The electron mobility dependence on doping concentration, electron mobility dependence on temperature, velocity dependence on electric field, intrinsic carrier concentration dependence on temperature and energy gap dependence on temperature for the III-V group materials are investigated thoroughly. The results obtained from this newly developed numerical device simulators can be used for RF power transistor development. To the best of authors’ knowledge this is the first comprehensive report on realistic modeling of III-V Nitride family materials.
Keywords: Elevated Temperature, Energy gap Dependence on Doping Concentration, Nitride Semiconductor, Temperature Dependent mobility, Dynamic characteristics.

Scope of the Article: Composite Materials