Metal-Oxide-Semiconductor Capacitors Fabricated on Zirconium Oxide High-Κ Gate Dielectric Nano Layers
Onkar Mangla1, Savita Roy2
1Onkar Mangla, Department of Physics, Daulat Ram College, University of Delhi, India
2Savita Roy, Department of Physics, Daulat Ram College, University of Delhi, India.
Manuscript received on 26 March 2019 | Revised Manuscript received on 07 April 2019 | Manuscript Published on 18 April 2019 | PP: 868-870 | Volume-7 Issue-6S March 2019 | Retrieval Number: F03750376S19/2019©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this study, we have fabricated zirconium oxide (ZrO2 ) nanolayers on silicon substrates by ablation of ZrO2 pellet due to interaction with the high temperature, high density and extremely non-equilibrium argon plasma in a modified dense plasma focus device. ZrO2 nanolayers are fabricated with two bursts of focused plasma on silicon substrates placed at distances of 4.0 cm and 5.0 cm from anode top. The thickness of nanolayers is found to be ~ 30 nm and ~ 20 nm for 4.0 cm and 5.0 cm substrate distances, respectively. Scanning electron microscopy (SEM) studies show formation of uniform nanolayers with nano-size structures of average size ~ 26 nm and ~ 19 nm for 4.0 cm and 5.0 cm substrate distances, respectively. Atomic force microscopy analyses further confirms the size and morphology of nanolayers obtained in SEM results. Current-voltage and capacitance-voltage measurements are done in Al-ZrO2 -Si metal-oxide-semiconductor (MOS) capacitor configuration. Fabricated MOS capacitors have low leakage current density of about 1.72 × 10-8 A/cm2 at 1 V and capacitance density of about 2.2 µF/cm2 . The conduction mechanisms which governs the electrical properties of MOS capacitors are found to be field/tunnel emission and Schottky emission in low and high electric field regimes, respectively. The fabricated MOS capacitors have improved electrical properties in terms of low leakage current and high capacitance density as compared to others reported in literature which is advantageous for next-generation MOS nanoelectronic devices.
Keywords: Zirconium Oxide; Nanolayers; Dense Plasma Focus; Metal-Oxide-Semiconductor; Nanoelectronics.
Scope of the Article: Metallurgy