Memristive Behavior in Magnetic Elements Separated by Thin Non-Magnetic Spacer Layer
Raj Kumar Singh1, Narendra Kumar Ram2, Kumari Mamta3
1Raj Kumar Singh, assistant Professor Department of Physics, Ranchi University, Ranchi, India.
2Narendra Kumar Ram, researchscholar Department of Physics, Ranchi University, Ranchi, India.
3Kumari Mamta, Associate Professor Department of Applied Science and Humanities, Cambridge Institute of Technology, Ranchi, India.

Manuscript received on November 22, 2019. | Revised Manuscript received on November 28, 2019. | Manuscript published on November 30, 2019. | PP: 2803-2806 | Volume-8 Issue-4, November 2019. | Retrieval Number: D8140118419/2019©BEIESP | DOI: 10.35940/ijrte.D8140.118419

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Abstract: Memristance due to domain wall displacement following spin polarization of current through two magnetic elements with a thin non-magnetic spacer layer in between has been studied in this paper. A domain wall is a type of spin structure appearing between two magnetic domains. When spin polarized current interacts with the second layer it produces a change of resistance which depends on the relative orientation of the magnetic moments in layers. Analytical simulation results on 10 nm sample size domain wall have been obtained under the impression of magnetic field and spin polarization of current. The non-linear pinched hysteresis loop obtained as currentvoltage characteristics shows linearity at high frequencies.
Keywords: Memristance, Domain Wall, Pinch Hysteresis, Spin Polarization.
Scope of the Article: Image Processing and Pattern Recognition.