Field-Plate Geometry Dependent Electrostatics and Strain Mapping in AlGaAs/GaAs HEMTs
R. K. Nanda1, T. P. Dash2
1R. K. Nanda, Department of EICE, Siksha O Anusandhan (Deemed to be University), Bhubaneswar, India
2T. P. Dash, Department of EICE, Siksha O Anusandhan (Deemed to be University), Bhubaneswar, India.
Manuscript received on November 20, 2019. | Revised Manuscript received on November 26, 2019. | Manuscript published on 30 November, 2019. | PP: 3217-3221 | Volume-8 Issue-4, November 2019. | Retrieval Number: D8028118419/2019©BEIESP | DOI: 10.35940/ijrte.D8028.118419
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: GaAs based power transistors provides higher switching speed compared to conventional Si transistors. The high electron mobility transistors (HEMTs) with AlGaAs/GaAs have got recent attentions for alternative suitable candidate for high frequency operation. The primary focus of the work is to study the electrostatics and stress/strain profile mapping due to the presence of field plate in AlGaAs/GaAs high electron mobility transistors. Using TCAD simulations, we examine the stress strain profile mapping as a function of field plate geometry and also study the electrostatics as function of field plate geometry and applied electric field.
Keywords: HEMT, Algaas/Gaas, Field Plate, TCAD, Electric Field, Stress/Strain Mapping.
Scope of the Article: Computational Geometry.