Structural, Optical and Frequency Dependent Electrical Behaviour of Aluminum Nitride (ALN) Nanopowder
C.K.Dixit1, Kapil Pandey2

1C.k. Dixit, Professor At Department Of Physics And Dean, Faculty Of Science And Technology, Dr. Shakuntala Misra National Rehabilitation University, Lucknow, Uttar Pradesh –226017 (India).
2Kapil Pandey, 1Research Scholar At Stefan Hawking’s Material Science Research Laboratory, Department Of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow, Uttar Pradesh – 226017 (India). 

Manuscript received on 11 August 2019. | Revised Manuscript received on 17 August 2019. | Manuscript published on 30 September 2019. | PP: 7928-7932 | Volume-8 Issue-3 September 2019 | Retrieval Number: C6625098319/19©BEIESP | DOI: 10.35940/ijrte.C6625.098319

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Abstract: Aluminum nitride (AlN) is ceramic material. It has very high thermal and low electrical conductivity. The Variation of Various Electrical Parameters viz. Impedance (Z), Admittance (Y), Dielectric Permittivity (ε’), Relative Loss (ε”), Electrical Conductivity (σ), and Loss Tangent (Tan δ) with frequency Dependence of Aluminum Nitride (AlN) Nano powder were studied. Scanning electron microscopy (SEM); Raman Spectroscopy; and X-ray diffraction (XRD) were used to analyse the surfaces and structures of aluminum nirtride nanopowder. It has been found that the particle size is of 36.15 nm and the crystallographic structure is amorphous. The surface morphology of the studied compound has been investigated by Scanning Election Microscopy (SEM) indicating the particles are in nanosize and characteristic range of diameters are in nanoscale. The electrical studies of the studied compound have been examined in order to acquire the electrical parameters (mainly dielectric permittivity, loss, conductivity, loss-tangent, impedance, and admittance). Small rise in the conductivity (with frequency dependent) has been observed due to the decrease in the particle size of the is also observed that the relative permittivity (ε’), relative loss (ε”) and dissipation factor (Tan δ) decreases with increase in frequency. The Raman shift variation with the intensity which shows the peaks of the compound are obtained at 506 cm-1, 615 cm-1 656 cm-1, 873 cm-1, 882 cm-1, 949 cm-1, and 974 cm-1using laser at 785 nm.
Keywords: AlN, XRD, SEM, Raman Spectroscopy, Relative Loss and Electrical Conductivity.

Scope of the Article:
Structural Engineering