Carrier Transport Properties of GAN in High Electric Field
Pei Ling Cheang1, Eng Kiong Wong2, Lay Lian Teo3
1Pei Ling Cheang, Faculty of Engineering and Technology, Multimedia University, Melaka, Malaysia.
2Eng Kiong Wong, Faculty of Engineering and Technology, Multimedia University, Melaka, Malaysia.
3Lay Lian Teo, Faculty of Engineering and Technology, Multimedia University, Melaka, Malaysia.
Manuscript received on 26 September 2019 | Revised Manuscript received on 05 October 2019 | Manuscript Published on 22 October 2019 | PP: 88-93 | Volume-8 Issue-3S October 2019 | Retrieval Number: C10171083S19/2019©BEIESP | DOI: 10.35940/ijrte.C1017.1083S19
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The Monte Carlo (MC) simulation of the carrier transport mechanisms including impact ionization at high electric field in GaN is presented. Two non-parabolic conduction and valence bands were considered for the simulation of transport properties of electron and hole respectively. The carriers’ drift velocity and energy are simulated as a function of applied electric field at room temperature. The maximum velocity of electron is 2.85 × 107 cm/s at 140 kV/cm. The velocity of electron is saturated at 2 × 107 cm/s at electric field greater than 300 kV/cm. In our work, the velocity of hole is 5 × 106 cm/s at 500 kV/cm. Electron energy increases as the electric field increase and fluctuated at electric field greater than 600 kV/cm when impact ionization occurred. The impact ionization rates are obtained by using modified Keldysh equation. The hole impact ionization rate is higher than that of electron. This work also shows higher electron impact ionization coefficient than that of hole at electric field greater than 4.04 MV/cm.
Keywords: Drift Velocity, Gallium Nitride, Impact Ionization, Monte Carlo.
Scope of the Article: High Performance Computing