Parameter Analysis of CNTFET
Anitha N1, Srividya P2
1Anitha N, Department of Electronics & Communication Engineering, Amruta Institute of Engineering & Management Sciences, Bidadi, Karnataka, India.
2Dr. Srividya P, Department of Electronics & Communication Engineering, R V College of Engineering, Bangalore, India.
Manuscript received on 07 March 2019 | Revised Manuscript received on 14 March 2019 | Manuscript published on 30 July 2019 | PP: 5355-5359 | Volume-8 Issue-2, July 2019 | Retrieval Number: B2609078219//2019©BEIESP | DOI: 10.35940/ijrte.B2609078219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect. All the parameters of CNTFET have been varied in CADENCE Virtuoso environment and verified with the preferred value of stanford VS-CNTFET model.
Index Terms: GAA-CNTFET, Source to Drain Tunneling Mode, Band to Band Tunneling Mode
Scope of the Article: Predictive Analysis