Computational Modeling on Thermal Control of Electronics using Water-Silicon Carbide Nanofluid
N. K. Kund

N. K. Kund, Department of Production Engineering, Veer Surendra Sai University of Technology, Burla (Sambalpur), Odisha, India.
Manuscript received on 5 August 2019. | Revised Manuscript received on 13 August 2019. | Manuscript published on 30 September 2019. | PP: 644-647 | Volume-8 Issue-3 September 2019 | Retrieval Number: B2521078219/19©BEIESP | DOI: 10.35940/ijrte.B2521.098319
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Abstract: For the current exploration, CFD codes are developed and executed with water-SiC nanofluid to visualize the thermal concerns of ICs. The convective governing equalities of mass, force and drive are computed for envisaging the thermal issues of ICs. The time pace selected throughout the intact computation is 0.0001 s. The soundings affect CFD forecasts of temperature curve, temperature arena plus fluid-solid boundary temperature of IC. The fluid-solid boundary temperature of IC is viewed as 309 K. This stands far less than the chancy limit of 356 K temperature wished for the objective of outwitting thermal cataclysm of IC. Tritely, the temperature of water-SiC nanofluid stands peak contiguous to the IC locality. Further, the temperature of water-SiC nanofluid gently drops with improvement in aloofness from IC. Afterwards, this becomes surrounding temperature in the distant arena precinct. The analogous tinted temperature curve stands accessible. Besides, the harmonizing graph of temperature against distance from IC stands revealed. Tritely, the development of CFD interpretations stand alongside the experiences of outlooks.
Index Terms: IC, CFD Codes, Thermal Control, Water-SiC Nanofluid.
Scope of the Article: Thermal Engineering