Design of high linearity Efficiency GaN Power Amplifier with Second Harmonic Tuning Technique
S Raja Gopal1, V S V Prabhakar2
1S. Raja Gopal, B. Tech and M. Tech Degree from JNTUH and JNTUK Universities A. P. India.
2Dr. V.S.V. Prabhakar, Professor in the Department of Engineering and Communication Engineering at KL University, Guntur, A.P. India.
Manuscript received on 06 April 2019 | Revised Manuscript received on 12 May 2019 | Manuscript published on 30 May 2019 | PP: 1045-1048 | Volume-8 Issue-1, May 2019 | Retrieval Number: A1180058119/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper a 3.8 GHz low voltage S-band power amplifier (PA) was designed. Second order harmonic technique is used at PA load to achieve high amount of output power and power added efficiency (PAE). GaN material is used for design purpose to satisfy tradeoff between PAE and output power. As GaN material provides high electron mobility property, high linearity operation is achieved. Major advantage of GaN material is its high thermal stability and exhibits fast switch mode operation when compared with other transistor designs. The proposed PA is designed based on MMIC technology. In addition to this PA output is connected to second order harmonic tuning circuit which in turn improves the output power and efficiency. At 1V of input supply proposed PA exhibits gain of 52dB and 62.5% PAE and output power of 54.22dB. The proposed PA is compared with conventional power amplifiers for better performance.
Index Terms: MMIC, PAE, S-Band, Power Amplifier.
Scope of the Article: Low-power design